t4 - lds - 0220, rev. 2 (7/ 29 /13) ?201 3 microsemi corporation page 1 of 5 1n821-1 C 1n829a-1 available on commercial versions 6.2 & 6.55 volt zener r eference d iodes qualified per mil - prf - 19500/159 * qualified levels : jan, jantx, jantxv and jans (available on some part numbers ) description the popular 1n821 -1 C 1n829a -1 series of t emperature c ompensated r eference d iodes provides both 6.2 v and 6.55 v nominal voltages and temperature coefficients as low as 0.0005 %/ o c at a zener test current of 7.5 ma. these do - 35 packaged (glass, axial leaded) reference diodes are optionally available as rohs compliant. this type of bonded zener package construction is also available in jan, jantx, jantxv and jans military qualifications where the rohs compliant e3 is not an option. microsemi also offers other zener reference diode products for a variety of voltages up to 200 v. do - 35 (do - 204ah) package also available in : do - 213aa melf (surface mount) 1n821ur -1 C 1n829 a ur -1 important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 1n 821 C 1n829 series . ? zener impedance values of 10 ohms and 15 ohms are available . ? reference voltage selection of 6.2 v & 6.55 v +/ - 5% with further tight tolerance options on commercial at lower voltage. (excludes 1n826 and 1n828.) ? temperature compensated. ? internal metallurgical bond . ? double plug construction. ? *j an, jantx, jantxv and jans qualification per mil - prf - 19500/159 available on 1n821 -1 , 823 - 1 , 825 -1 , 827 -1 and 829 -1. ? rohs compliant versions available (commercial grade only) . applications / benefits ? provides minimal voltage changes over a broad temper ature range. ? for instrumentation and other circuit designs requiring a stable voltage reference. ? maximum temperature coefficient selections available from 0.01 %/oc to 0.0005 %/oc. ? tight reference voltage tolerances of 1%, 2%, 3%, etc , available on comme rcial with center nominal value of 6. 2 v by special request . (excludes 1n826 and 1n828.) ? flexible axial - lead mounting terminals. ? non - sensitive to esd per mil - std - 750 m ethod 1020. ? typical low capacitance of 100 pf or less. maximum ratings @ t a = +25 oc u nless otherwise specified msc C law rence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 tel: (978) 620 - 2600 fax: (978) 689 - 0803 msc C irela nd gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test c onditions symbol value unit junction and storage temperature t j and t stg - 55 to +175 o c power dissipation (1) p d 500 mw maximum zener current i zm 70 ma solder pad temperatures at 10 s t sp 260 o c notes : 1. at t l = 25 o c and maximum current i zm of 70 ma. for optimum voltage - temperature stability, i z = 7.5 ma (less than 50 mw in dissipated power). derate at 3.33 mw/ o c above t a = +25 o c . downloaded from: http:///
t4 - lds - 0220, rev. 2 (7/ 29 /13) ?201 3 microsemi corporation page 2 of 5 1n821-1 C 1n829a-1 mechanical and packaging ? case: hermetically sealed glass case. do - 35 (do - 204ah) package. ? terminal s: tin -l ead (military) or rohs compliant annealed matte -t in plating (commercial grade only) solderable per mil - std - 750, m ethod 2026. ? marking: part number and cathode band (except double anode 1n822 -1 and 1n824 -1 ). ? polarity: reference diode to be operated with the banded end positive with respect to the opposite end. ? tape & reel option: standard per eia - 296 (add tr suffix to part number). consult factory for quantities. ? weight: approximately 0.2 grams. ? see p ackage d imensions on last page. part nomenclature applicable to: jan, jantx, jantxv and jans of 1n821, 1n823, 1n825, 1n827, and 1n829 only : jan 1n821 -1 reliability level jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level b lank = commercial metallurgical bond jedec type number (see electrical characteristics table) applicable to: commercial 1n821, 1n823, 1n825, 1n827, and 1n829 only : 1n821 a -1 (e3) jedec type number (s ee electrical characteristics t able ) zener impedance a = 10 ohms blank = 15 ohms rohs compliance e3 = rohs c ompliant blank = non - rohs c ompliant metallurgical bond applicable to: 1n82 2, 1n82 4 , 1n826 and 1n828 only : 1n82 2 -1 (e3) jedec type number (s ee electrical characteristic s t able ) metallurgical bond rohs compliance e3 = rohs c ompliant blank = non - rohs c ompliant downloaded from: http:///
t4 - lds - 0220, rev. 2 (7/ 29 /13) ?201 3 microsemi corporation page 3 of 5 1n821-1 C 1n829a-1 symbols & definitions symbol d efinition i r reverse current: the maximum reverse (leakage) current that will flow at the specified vol tage and temperature. i z , i zt , i zk regulator current: the dc regulator current (i z ), at a specified test point (i zt ), near breakdown knee (i zk ). v z zener voltage: the z ener voltage the device will exhibit at a specified current (i z ) in its breakdown region. z zt or z zk dynamic impedance: the small signal impedance of the diode when biased to operate in its break down region at a specified rms curren t modulation (typically 10% of i zt or i zk ) and superimposed on i zt or i zk respectively. electrical characteristics @ 25 o c (unless otherwise specified) jedec type number zener voltage v z @ i zt (note 3) zener test current i zt maximum zener impedance z zt @ i zt (note 1) maximum reverse current i r @ 3 v voltage temperature stability ( ? v zt max) - 55 o c to +100 o c (note 2 and 3) effective temperature coefficient vz v olts ma ohms a mv % / o c 1n821 -1 1n821a -1 5.89 - 6.51 5.89 - 6.51 7.5 7.5 15 10 2 2 96 96 0.01 0.01 1n822 -1? 5.9 - 6.5 7.5 15 2 96 0.01 1n823 -1 1n823a -1 5.89 - 6.51 5.89 - 6.51 7.5 7.5 15 10 2 2 48 48 0.005 0.005 1n824 -1? 5.9 - 6.5 7.5 15 2 48 0.005 1n825 -1 1n825a -1 5.89 - 6.51 5.89 - 6.51 7.5 7.5 15 10 2 2 19 19 0.002 0.002 1n826 -1 6.2 - 6.9 7.5 15 2 20 0.002 1n827 -1 1n827a -1 5.89 - 6.51 5.89 - 6.51 7.5 7.5 15 10 2 2 9 9 0.001 0.001 1n828 -1 6.2 - 6.9 7.5 15 2 10 0.001 1n829 -1 1n829a -1 5.89 - 6.51 5.89 - 6.51 7.5 7.5 15 10 2 2 5 5 0.0005 0.0005 ? double anode: electrical specifications apply under both bia s polarities. notes: 1. zener impedance is measured by superimposing 0.75 ma ac rms on 7.5 ma dc @ 25 o c. 2. the maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed t he specified mv change at any discrete temperature between the established limits. 3. voltage measurements to be performed 15 seconds after application of dc current. downloaded from: http:///
t4 - lds - 0220, rev. 2 (7/ 29 /13) ?201 3 microsemi corporation page 4 of 5 1n821-1 C 1n829a-1 graphs operating current i zt (ma) figure 1 typical zener impedance vs operating current i z C operating current (ma) i z C operating current (ma) figure 2 figure 3 typical change of temperature coefficient typical change of zener voltage with change in operating current with change in operating current the curve shown in figure 2 is typical of the diode series and greatly simplifies the estimation of the temperature coefficient (tc) when the diode is operated at currents other than 7.5 ma. example: a diode in this series is operated at a current of 7.5 ma and has specified temperature coe fficient (tc) limits of +/ - 0.005 %/ o c . to obtain the typical temperature coefficient limits for this same diode operated at a curre nt of 6.0ma, the new tc limits (%/ o c ) can be estimated using the graph in f igure 2 . at a test current of 6.0ma the change in temperature coefficient (tc) is approximately C 0.0006 %/ o c . the algebraic sum of +/ - 0.005 % o c and C 0.0006 %/ o c gives the new estimated limits of +0.0044 %/ o c and - 0.0056 %/ o c. change in temperature coefficient (%/ o c) this curve in figure 3 illustrates the change of diode voltage arising from the effect of impedance. it is in effect an explode d view of the zener operating region of the i - v characteristic. in conjunction with figure 2 , this curve can be used to estimate total voltage regulation under conditions of both varying temperature and current. ? v z C chang e in zener voltage (mv) zener impedance i zt (ohms) downloaded from: http:///
t4 - lds - 0220, rev. 2 (7/ 29 /13) ?201 3 microsemi corporation page 5 of 5 1n821-1 C 1n829a-1 package dimensions ltr d imensions notes inch m illimeters min max min max bd 0 .05 5 0.090 1.40 2.29 3 bl 0.120 0.200 3.05 5.08 3 ld 0 .018 0 .022 0.46 0.56 ll 1.000 1.500 25.40 38.10 ll 1 0 .050 1.27 4 no tes: 1. dimensions are in inches. 2. millimeters are given for i nformation onl y. 3. package contour o ptional w ithin bd and length bl. h eat slugs, if any shall be included w ithin this c y linder but shall not be subject to minimum limit of bd. 4. w ithin this zone, lead diameter may vary to all ow for lead finishes and irregularities, other than heat slugs. 5. in accordance w ith asme y14.5m, diameters are equivalent to x s y mbolog y. downloaded from: http:///
|
